to-92 plastic-encapsulate transistors 1n60 mosfet(n-channel) features robust high voltage terminrtion avalanche energy specified source-to-drain diode recovery time comparable to a discrete fast recovery diode diode is characterrized for use in bridge circuits maximum ratings (ta=25 unless otherwise noted) symbol ? parameter ? value ?? units v ds drain-source voltage 600 v v gs gate-source voltage 30 v i d drain current-continuous 1 a i d (100 ) drain current-continuous(tc=100 ) 0.7 a i dm pulsed drain current 4 a p d maximum power dissipation 1 w e as single pulse avalanche energy 30 mj t j ,tstg operating junction and storage temperature range -55-150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min typ max unit drain-source breakdown voltage v (br)dss v gs =0v,i d =250ua 600 v zero gate voltage drain current i dss v ds =600v, v gs = 0 v 100 ua gate-body leakage i gss v ds =0v, v gs = 30v 100 na gate-threshold voltage vth (gs) v ds = v gs, i d =250 ua 2 4 v drain-source on-resistance r ds(on) v gs =10v, i d =0.5a 10.5 diode forward voltage(note3) v sd v gs =0 v , i d =1 a 1.5 v input capacitance ciss 150 output capacitance coss 25 reverse transfer capacitance crss v ds =25v, v gs = 0 v, f=1mhz 4 pf product specification 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
typical characteristics 1n60 product specification 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
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